Simulation-Based Analysis of Ultra Thin-Body Double Gate Ferroelectric TFET for an Enhanced Electric Performance

development and implementation of an optimized control strategy for induction machine in an electric vehicle

in the area of automotive engineering there is a tendency to more electrification of power train. in this work control of an induction machine for the application of electric vehicle is investigated. through the changing operating point of the machine, adapting the rotor magnetization current seems to be useful to increase the machines efficiency. in the literature there are many approaches wh...

Performance Enhancement of Capacitive-Coupling Dual-gate Ion-Sensitive Field-Effect Transistor in Ultra-Thin-Body

Recently, thin-film transistor based-ISFETs with the dual-gate (DG) structures have been proposed, in order to beat the Nernst response of the standard ISFET, utilizing diverse organic or inorganic materials. The immutable Nernst response can be dramatically transformed to an ultra-sensing margin, with the capacitive-coupling arisen from the DG structure. In order to advance this platform, we h...

Ultra low power TFET-based circuits

University Institut Supérieur d’Electronique de Paris (ISEP) – Paris, France Description: Today the circuits dissipate a lot of power without offering performance increase from one technological node to another. It is therefore logical to investigate other solutions than the classical CMOS ones in the attempt to reduce the power consumption. In this context the tunneling FET (TFET) is seen as a...

Simulation of Ferroelectric Thin Films

The hysteresis properties of ferroelectric thin films open an elegant and promising way to build nonvolatile memory cells. Our basic goal is to set up a tool which is able to reproduce the macroscopic behavior of the devices by calculating current, voltage and charge at the contacts correctly. Our tool, MINIMOS-NT, provides a rigorous approach to describe the static hysteresis properties of fer...

Comparative Study of Low-Field Mobilities in Double- and Single- Gate Ultra-Thin Body SOI for Different Substrate Orientations